- Determination of recombination coefficients for hydrogen, oxygen, and nitrogen gasses via in situ radical probe system
- Radical probe system for in situ measurements of radical densities of hydrogen, oxygen, and nitrogen
- In silico design of a thermal atomic layer etch process of cobalt
- Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition
- Ultrasmooth cobalt films on SiO2 by chemical vapor deposition using a nucleation promoter and a growth inhibitor
- Publisher’s Note: “Analysis of ErAs nanoparticle surface grown using a two-step modified diffusion length process” [J. Vac. Sci. Technol. A 39, 023402 (2021)]
- Selective chemical vapor deposition of HfB2 on Al2O3 over SiO2 and the acceleration of nucleation on SiO2 by pretreatment with Hf[N(CH3)2]4
- Monolayer attenuation length of low-energy electrons in Gd and Tb
- Sticking coefficients of selenium and tellurium
- Theoretical model for fast calculations of the electrical resistivity of thin metallic films with rough surfaces
- Design of Ga2O3 modulation doped field effect transistors
- Thermal atomic layer etching of germanium-rich SiGe using an oxidation and “conversion-etch” mechanism
- Intrinsic excitation-dependent room-temperature internal quantum efficiency of AlGaN nanowires with varying Al contents
- Outgassing rate comparison of seven geometrically similar vacuum chambers of different materials and heat treatments
- ERRATUM: “Chemical passivation of the perovskite layer and its real-time effect on the device performance in back-contact perovskite solar cells” [J. Vac. Sci. Technol. A 38, 060401 (2020)]
