- Monitoring subwavelength grating structures for vertical-cavity surface-emitting laser applications by spectroscopic ellipsometry
- Sidewall channel fabrication using membrane projection lithography and metal assisted chemical etching
- Tip-based electron beam induced deposition using active cantilevers
- Morphology and emission characteristics of an HfC〈110〉 thermal-field electron source
- Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process
- Effects of abnormal beams on writing qualities in massively-parallel e-beam systems
- Assessing stability of metal tellurides as alternative photomask materials for extreme ultraviolet lithography
- Investigation and optimization of reactive ion etching of Si3N4 and polyphthalaldehyde for two-step gray scale fabrication of diffractive optics
- Infrared spectroscopic ellipsometry and optical spectroscopy of plasmons in classic 3D topological insulators
- Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry
- InAs(111)A homoepitaxy with molecular beam epitaxy
- Detection of DNA homopolymer with graphene nanopore
- Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma
- Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
- Exploration of a Ca1−x(NaCe)x/2Bi4Ti3.98(WNb)0.01O15 ceramic intermediate phase by temperature-dependent spectroscopic ellipsometry and Raman scattering
