The rate at which material is removed during an etch process, typically expressed as Å.s-1 or nm.s-1.
« Back to Glossary IndexYou may also like
There is presently rapid development of non-volatile memory devices in the form of Magnetic Tunnel Junctions. These structures form the memory elements […]
Our lovely 2018 calendar reflects a summer holiday spent in Sicily in 2017. It almost goes without saying that the weather and […]
The development of thin film magnetic devices is a relatively new and exciting science, and Nordiko has been at the forefront in […]
One of the many reasons why Smartphones are so clever is to do with their incredible glass screens. Gorilla Glass was developed […]