- 304
- 316
- Absorption
- Accelerator
- Adsorption
- ALD
- ALE
- Allotrope
- AMR
- amu
- Ångstrom
- Anode
- Antiferromagnetic
- Aperture
- AR
- Argon
- Austenite
- Avogadro's number
- Bakeout
- Batch process
- Beam
- Bolometer
- Capacitive
- Capacitor
- Cassette
- Cathode
- CD
- Chalcogen
- Chalcogenide
- Channeltron
- Charge Exchange
- CIS(CIGS)
- CMOS
- Coercivity
- Conductor
- Cryogenic
- CVD
- Degas
- Deposition
- Dewar
- Dielectric
- Diode
- DRAM
- Dynode
- Electrode
- Electron
- Electrostatic
- Emittance
- Etch
- Etch rate
- Etch stop
- Ethernet
- eV
- Faraday Cage
- Faraday detector
- Ferromagnetic
- Flux
- Free radical
- Gauss
- GEM
- Getter
- Glow discharge
- GMR
- GUI
- Hall effect
- Hard mask
- HD-PECVD
- HDP
- Helium
- Heterojuction
- HMI
- Hole
- Host
- HR
- Hysteresis
- ICP
- Induction
- Inverter
- Ion
- Ion Source
- Ionisation
- ITO
- Junction
- Kerr effect
- Kinematics
- Knudsen flow
- Krypton
- LASER
- Lattice
- LED
- Load lock
- Magnetron
- Mask
- MEMS
- Metallisation
- Metrology
- Microloading
- Module
- Mole
- Molecular sieve
- MRAM
- MTJ
- Nanomanufacturing Technology
- Nanometer
- Neon
- Neutrals
- Newton
- Oersted
- Ozone
- Pascal
- Patterned
- PBN
- PECVD
- Perveance
- Photomask
- Piezoelectric
- Piezoresistance
- Piezoresistive
- Pirani
- Plasma
- Poisson's ratio
- Process chamber
- PVD
- Q-factor
- Quadrupole
- RAM
- Recipe
- Refractory
- Resistance
- Reynolds number
- RF
- RIE
- ROM
- Roughing pump
- Scalar
- Secondary pump
- SECS/GEM
- Selectivity
- Semiconductor
- Sheath
- Sorption
- Spectrometer
- Spin
- Spin transfer torque
- Spin valve
- Sputter
- Step coverage
- Stoichiometry
- Substrate
- Target
- TCO
- TCP/IP
- Tesla
- Tetrode
- Thin Film
- TMR
- Tokomak
- Topography
- Torque
- Torr
- Triode
- Turbomolecular pump
- UHV
- Vacuum
- Vector
- Work function
- Xenon
- Zeolite
