Acronym: Magnetoresistive Random Access Memory. A non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s.
« Back to Glossary IndexYou may also like
There is presently rapid development of non-volatile memory devices in the form of Magnetic Tunnel Junctions. These structures form the memory elements […]
One of the many reasons why Smartphones are so clever is to do with their incredible glass screens. Gorilla Glass was developed […]
We have introduced a new PVD module, the 8800. This is can be equipped with up to ten magnetron cathodes and is […]
Our modern world relies extensively on batteries – and their strength and recharge-ability taxes our research scientists considerably. Lithium is the […]